Apparatus and method for rapid thermal processing

ABSTRACT

An apparatus for rapid thermal processing is described and includes a cylindrical lamp array structure ( 13 ) surrounding a cylindrical process tube ( 16 ). The cylindrical process tube ( 16 ) has a lengthwise central axis ( 22 ). The cylindrical lamp array structure ( 13 ) includes heat sources or lamps ( 26 ). The lamps ( 26 ) are positioned with respect to the cylindrical process tube ( 16 ) so that the sides of the lamps ( 26 ) focus light energy in the direction of the lengthwise central axis ( 22 ). Substrates ( 12 ) are oriented within the cylindrical process tube ( 16 ) so that the major surfaces ( 14 ) of the substrates ( 12 ) are substantially normal to the lengthwise central axis ( 22 ). In an alternative embodiment, a magnetic field source ( 19 ) is included for processing storage devices such as non-volatile memory devices.

BACKGROUND OF THE INVENTION

This invention relates, in general, to the processing of electronicdevices, and more particularly to structures and methods for rapidlyheating substrates.

The need for non-volatile memory (NVM) devices is rapidly growing due toa large demand for consumer products that retain information in theabsence of applied power. This is especially true for portable equipmentsuch as pagers, cellular phones, smart cards, portable computers andpersonal information managers. Flash memory, ferroelectric memory, andmagnetic memory devices are experiencing rapid growth, while establishedNVM technologies such as EPROM, EEPROM and ROM appear to be stable. Sucha diversity of NVM devices utilizing unique materials presentsmanufacturers with new and often difficult manufacturing challenges.

Rapid thermal processors (RTPs) have been used for sometime in thesemiconductor industry mainly in contact formation, barrier layerformation, and implant activation. Although RTPs provide an advantageover conventional furnace processing (e.g., faster ramp rates andreduced process times), RTPs have a disadvantage in that they process asingle substrate at time. This affects system throughput and the cost ofownership.

Thus, tools and methods are needed for processing new materials andstructures, such as those in non-volatile memory devices, as wells as.for processing conventional materials and structures. The tools andmethods must flexible, cost effective, simple to use, and capable ofrapidly processing multiple substrates at a time in a reproduciblemanner.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an end view of a portion of an annealing apparatusaccording to the present invention;

FIG. 2 illustrates an alternative embodiment of an annealing apparatusaccording to the present invention;

FIG. 3 illustrates a side view of a substrate loading device accordingto the present invention;

FIG. 4 illustrates an end view of the substrate loading device of FIG.3;

FIG. 5 illustrates a cross-section view of a portion of a non-volatilememory device processed according to the present invention; and

FIG. 6 illustrates a cross-sectional view of a portion of semiconductordevice processed according to the present invention.

DETAILED DESCRIPTION OF THE DRAWINGS

In general, the present invention relates to structures and methods forthermally heating electronic devices or semiconductor substrates in abatch form. More particularly, the present invention includes acylindrically shaped process chamber having a pair of opposing ends.When substrates to be processed are placed within the process chamber,the major surfaces of the substrates are substantially parallel to theopposing ends. A cylindrically shaped lamp array is placed around theprocess chamber to provide a heat source for the substrates.

In one embodiment, a magnet is placed around the process chamber andlamp array to provide a magnetic field of desired strength within theprocess chamber. In a preferred embodiment, an IR absorbing structuresubstantially surrounds the substrates to provide enhanced heatinguniformity. In a further embodiment, lamps within the lamp array areprovided in a multiple zone configuration, with each zone havingindependent temperature monitoring and power control.

One emerging area of NVM technology utilizes magnetoresistive or giantmagnetoresistive materials. In magnetoresistive RAM (MRAM or GMRAM)technology, devices are built from alternating ultra-thin layers ofmagnetic and non-magnetic materials. In a typical MRAM device, aconductive non-magnetic interlayer separates or is sandwiched betweentwo magnetic layers. The resistance of the conductive non-magneticinterlayer is a function of conduction electron spin-dependentscattering at the boundaries between the non-magnetic conducting layerand the magnetic layers.

Spin-dependent scattering is a quantum mechanical effect where therelative orientation of the conduction electron spins and the magneticmoment of the magnetic material affect the mean free path of electronsin magnetic conductors, and in turn their resistivity. The resistivityof metals is dependent upon the mean free path of the conductionelectrons. The shorter the mean free path, the higher the resistance ofthe metal.

Absent an external magnetic field, the magnetic layers areantiferromagnetically coupled. That is, the magnetic moments of themagnetic layers are parallel to each other, but in opposite directions.This is commonly referred to as “anti-parallel.” When the magneticlayers are anti-parallel, electron scattering is at a maximum, and thus,the resistance of the conductive layer is maximized.

Under an external magnetic: field, the bottom magnetic layer becomesparallel with the top magnetic layer. When the magnetic layers areparallel, electron scattering is at a minimum, and thus the resistanceof the conductive layer is minimized. Examples of materials used in MRAMtechnology for the magnetic layers include alloys of iron (Fe), cobalt(Co), or nickel (Ni). Examples of materials used for the innerconductive layer include copper (Cu) or platinum (Pt).

One critical processing step used in MRAM manufacturing is theapplication of an appropriate magnetic field and thermal conditions tomagnetize the top and bottom layers, to align the magnetic moments ofthe top and bottom magnetic layers, and to alloy the materials therebylowering total electrical resistance.

One prior art apparatus used to provide this function involves a singlewafer chamber placed in proximity to a permanent magnet. During theprocess, a single wafer is heated using a heated gas while exposed tothe magnetic field. This approach has several disadvantages includingpoor temperature control (e.g., slow ramp rates) and single waferprocessing. Both of these factors affect manufacturing throughput andcost of ownership.

FIG. 1 illustrates an end-view of an apparatus, process structure, orbatch anneal device 11 for processing substrate or substrates 12.Apparatus 11 includes a cylindrical lamp array 13, a cylindrical processtube, chamber, vessel, or round process tube 16, and substrate enclosurestructure or substrate support device 18. Cylindrical process chamber 16has a lengthwise central axis 22, which is normal to the page in FIG. 1.An outer shell or skin 17 encloses cylindrical lamp array 13. Apparatus11 further includes temperature control structures or control devices21, which are attached or coupled to chamber 16 in proximity to lamps26. Supports or rails 23 support substrate enclosure 18 and substrates12 while within chamber 16, and further provide support while enclosure18 and substrates 12 are moved in and out of chamber 16.

Substrates 12 comprise, for example, a semiconductor material suchsilicon, GaAs, silicon-germanium, or other III-V or IV-IV materials.Alternatively, substrates 12 comprise a metal, an insulator orcombinations thereof. Substrates 12 either are blank or contain, forexample, individual devices such as integrated circuit devices ordiscrete devices.

In an embodiment suitable for processing MRAM memory devices, apparatus11 includes a device for providing a magnetic field or magnet 19, whichpartially surrounds or surrounds a portion of cylindrical lamp array 13and chamber 16 in a “U” like configuration. For MRAM processing, a100-2000 Gauss (or greater) fixed position dipole permanent magnet issuitable for providing an appropriate magnetic field within chamber 16to magnetize the magnetic layers of an MRAM device. Such magnets areavailable from Dexter Magnetic technologies of Fremont Calif.Alternatively, magnet 19 comprises an electromagnetic, a superconductivemagnet, or the like. For 100, 125, 150 or 200 millimeter (mm) substrateprocessing, the inside distance between the sides of magnet 19 is about414 mm (about 16 inches), with a diameter for outer shell 17 of 389 mm(about 15 inches) being appropriate. Additionally, these dimensions arescalable for 300 or 400 mm substrates.

According to the present invention, cylindrical lamp array 13 includes aplurality of lamp holders or lamp carriers 24 and a plurality of lampsor thermal energy sources 26. Preferably, lamp carriers 24 have a curvedor parabolic shape, are liquid cooled and are comprised of aluminum. Theparabolic or curved shape of lamp carriers 24 is preferred in order tofocus light energy from lamps 26 in a distinct path towards chamber 16.Lamp carriers 24 preferably are placed close together to minimize lightleakage between carriers. Alternatively, lamp carriers 24 have a flat orcircular shaped reflective surface.

To provide reflectance and a desired spectral response, the reflectivesurface of each of lamp carriers 24 preferably is polished to provide amirror finish. Lamp carriers 24 typically have a length on the order ofabout 0.965 meters (about 38 inches), but can be longer or shorter.Liquid cooled lamp holders suitable for lamp holders 24 are availablefrom Research Incorporated of Eden Prairie, Minn. Alternatively, thereflective surface of lamp carriers 24 is coated with gold, aluminum,chrome, platinum, silver, silicon nitride, tantalum carbide, titaniumnitride, combinations thereof, or the like to provide a desired spectralresponse.

Lamps 26 are placed within a portion of, or all of lamp carriers 24,with the sides of lamps 26 running the length of chamber 16. In thisconfiguration, major surfaces 14 of substrates 12 are substantiallyperpendicular to lamps 26. That is, cylindrical lamp array 13 surroundscylindrical process vessel 16, and lamps 26 are positioned so that thesides of lamps 26 substantially focus light energy towards or in thedirection of lengthwise central axis 22 of cylindrical process vessel16. Substrates 12 are placed within cylindrical process vessel 16 withmajor surfaces 14 substantially normal to lengthwise central axis 22.This orientation provides rapid heating and cooling capability forprocessing large batches of, substrates 12.

In the embodiment of FIG. 1, the ends of lamps 26 are shown, with thecylindrical sides of lamps 26 running into the page. This is morereadily apparent in FIG. 3. In an alternate embodiment, lamp array 13comprises a plurality or stack of circular or “donut-shaped” lampsstacked to form a cylinder like shape, which surrounds cylindricalprocess tube 16.

In a configuration suitable for rapidly heating substrates 12 comprisingMRAM or GMRAM memory devices, lamps 26 preferably comprise a heat sourcethat does not significantly interfere with the magnetic field generatedby magnet 19. Preferably, lamps 26 comprise quartz halogen lamps (2,000to 20,000 Watts, with 3,800 Watts being convenient). Such lamps arefurther preferred because they respond quickly to external controlinputs compared to metal winding heating elements used in conventionalbatch furnaces.

To keep lamps 26 cool and to prevent excessive heat from reaching magnet19, lamp carriers 24 are preferably liquid cooled (e.g., water cooled).A flow rate of approximately 0.02 liters per second of 70° C. waterthrough each of lamp carriers 24 is suitable for cooling 3,800 Wattquartz halogen lamps. Additionally, it is preferred that magnet 19 notbe, exposed to temperatures greater than about 100° C. In a furtherembodiment, cooling fans or the like are added to apparatus 11 tofurther assist in cooling magnet 19.

In the configuration suitable for MRAM processing where the magneticlayers are annealed and magnetized, lamps 26 preferably are placed in astar-like pattern around chamber 16 in groups of three lamps to providefive heating zones. However, depending on the desired application, moreor less lamps 26 are used to provide more or less heating zones (e.g.,FIG. 2 shows lamps 26 in all positions).

Preferably, each of the five zones is individually powered andcontrolled to provide multiple zone temperature control duringprocessing. This provides flexible, simplified, and repeatable processcontrol. In FIG. 1, lamps 26 are shown in the star-like pattern withthree groups of lamps around the bottom half and two groups of lampsaround the top half of chamber 16. Alternatively, three groups of lampsare placed around the top half and two groups of lamps are placed aroundthe bottom half of chamber 16.

Chamber 16 preferably comprises a material that is substantiallytransparent or that absorbs minimal IR energy from lamps 26. Clear fusedor sand quartz are suitable. Alternatively, chamber 16 comprises siliconcarbide, alumina or a refractory metal such as titanium, tantalum, orthe like. Rails 23 each preferably comprise an outer sheath 34 and aninner sheath 36. Outer sheath 34 comprises, for example, quartz andinner sheath 36 comprises alumina-silica or silicon carbide.

Control devices 21 each preferably comprise an outer sheath 28, an innersheath 29, and a temperature transducer 31. In a preferred embodimentfor use with quartz halogen lamps, outer sheath 29 comprises quartz,inner sheath 29 comprises silicon carbide, and temperature transducer 31comprises a two junction profile/spike configuration thermocouple. Itwas found that a silicon carbide inner sheath provides a more accuratetemperature reading during processing compared to a design consisting ofan outer quartz sheath only. This provides better process control andleads to longer lamp life. Quartz and silicon carbide sheaths areavailable from Norton Electronics of Pittsburgh, Pa.

Control devices 21 are coupled to a temperature control system (notshown) that analyzes temperature data and controls power adjustments tomaintain the desired temperature profile within chamber 16. It isimportant for the temperature control system to quickly respond totemperature changes caused by system variables. A model based controlleris preferred over a conventional proportional integral derivative (PID)controller. Model based controllers are available from companies such asSEMY Engineering of Phoenix, Ariz. Using a model based controller,apparatus 11 provides a steady state temperature capability of less than±0.5° C. across five zones.

Outer shell 17 surrounds and encloses cylindrical lamp array 13.Preferably, outer shell 17 comprises stainless steel with the innersurface polished to provide a mirror finish. The mirror finish serves toreflect any stray light from lamps 26 during processing.

Substrate enclosure 18 preferably comprises a material having a highemissivity. For example, substrate enclosure 18 comprises siliconcarbide or the like. During processing, substrate enclosure 18 absorbsIR energy from lamps 26 to provide a radiant. heat source for substrates12. This allows substrates 12 to heat more uniformly.

In an alternative embodiment, and as shown in FIG. 2, an insert or liner27 is placed within chamber 16 between control devices 21 and substrates12. Insert 27 can run the length of chamber 16 or only occupy a portionof chamber 16. Insert 27 preferably comprises a material having a highemissivity (e.g., silicon carbide or the like), and is used instead ofenclosure 18 to provide a radiant heat source. A boat 32 providessupport for substrates 12, and preferably comprises quartz.

In an embodiment where liner 27 occupies a portion of chamber 16 only,substrates 12 are placed within liner 27 for the heating cycle. Duringthe cooling cycle, substrates 12 are moved outside of liner 27 toanother portion of chamber 16 or out of chamber 16 to allow for a fastercooling rate. Optionally, injectors 33 are used to inject a gas (e.g.,nitrogen) through openings in injectors 33 to provide enhanced heatremoval during the cooling cycle.

In a further embodiment, apparatus 11 is provided absent magnet 19. Inthis further embodiment, apparatus 11 is suitable for rapid batchthermal processing of substrates 12. For example apparatus 11 issuitable for implant anneals, dopant diffusion, gate dielectricformation (e.g., oxides, oxy-nitrides, high K dielectrics, and thelike), silicide formation, borophosphosilicate glass (BPSG) reflow,poly-silicon activation, refractive metal nitride diffusion barriers,polycide formation, oxide densification, sintering, alloying, or thelike. Additionally, apparatus 11 is suitable for use as a horizontalsystem, a vertical system, or an orientation in-between.

As described herein, apparatus 11 provides temperature ramp-up rates ofabout 150° C./minute and ramp down rates of about 50° C./minute with apreferred upper temperature limit on the order of 1300° C. Variousambients (i.e., inert and/or reactive) are used depending on the processapplication. For processing MRAM/GMRAM devices as will be described inmore detail below, a low O₂ environment is preferred.

FIG. 3 illustrates a side view of an adjustable substrate loadingapparatus 41 according to present invention. Apparatus 41 is pertinentto apparatus 11 when used with magnet 19 in the processing of storagedevices to provide a means for skew adjust. That is, apparatus 41 isused to both load substrates 12 into chamber 16 and to provide a meansfor accurately aligning substrates 12 to a desired orientation withinthe magnetic field provided by magnet 19. A simplified view of lamps 26is provided to further show the orientation of substrates 12 withrespect to lamps 26.

Apparatus 41 is shown with enclosure 18 in a partial cut-away view toshow substrates 12 contained inside. Rails 23 support enclosure 18, abaffle 43, a first door 46, and a second door 47. In a preferredembodiment, baffle 43 and first door 46 comprise quartz, and second door47 comprises a metal such stainless steel. Baffle 43 provides for a morestable temperature profile during processing, increases gas velocityduring processing, and minimizes the opening of chamber 16 to reduce theexposure to room ambient, which can be detrimental to deviceperformance.

Apparatus 41 further includes a support bar 48 mounted to a supportstructure or loader head assembly 51. A drive motor (not shown) movessupport structure 51 along track 52 to move enclosure 18 and baffle 43into chamber 16. Pedestals 53 and 56 provide support for support bar 48.Top members or clamps 54 and 57 are coupled to pedestals 53 and 56respectively using, for example, mounting bolts (not shown).

Cantilever clamping assembly 71 is attached to a portion of support bar48. Cantilever clamping assembly 71 includes support pedestals 73 and 74and clamping portions 76 and 77, which are attached using, for example,bolts, fasteners, or the like. Clamping portions 78 and 79 hold innersheath 36 to pedestals.73 and 74, and are attached using, for example,bolts, fasteners, or the like. A sheath seal assembly 83 couples innersheath 36 to inner sheath 34. When a multiple rail structure is used,such as that shown in FIG. 1, one support bar/sheath seal assembly isused for each rail.

As indicated above, in the processing of MRAM and GMRAM devices, it isnecessary to align the magnetic moments of the top and bottom magneticlayers of the devices. In order to provide proper alignment of themagnetic moments, it is necessary to provide a means for accuratelyaligning substrates 12 to the magnetic field. To do this, an alignmentgauge 59 is attached to one end of support 48. FIG. 4 illustrates an endview of apparatus 41, and better shows a preferred alignment device 59.

To provide the desired alignment of substrates 12, the mounting boltsholding top members 54 and 57 to pedestals 53 and 56 are loosened.Support bar 48 is then rotated to a desired positioned with respect toreference point 61. The desired position is typically established usingtest wafer measurements or the like. Once the desired position isobtained, the mounting bolts are again tightened. After systemalignment, the major flats of substrates 12 preferably are aligned in adown position in enclosure 18. Alternatively, the desired position ofsubstrates 12 with respect to the magnetic field is done using automatedalignment.

In a method for processing substrates 12 when substrates 12 compriseMRAM or GMRAM devices, apparatus 41 is adjusted as described above sothat substrates 12 are appropriately aligned to the magnetic fieldprovided by magnet 19. Substrates 12 are then loaded in enclosure 18 ina major flat down orientation.

The materials used in manufacturing MRAM/GMRAM devices are susceptibleto oxidation, and as a result, oxygen within chamber 16 must be purgedto avoid impaired device performance. An oxygen concentration of lessthan about 20 parts per million (ppm) within chamber 16 is preferredwhen processing MRAM or GMRAM devices.

Before substrates 12 are loaded into chamber 16, chamber 16 is purgedusing, for example, nitrogen. Preferably, chamber 16 is purged forapproximately 10 minutes using a flow rate of about 50 standard litersper minute (SLPM), while chamber 16 is maintained at a temperature ofapproximately 100 to 300° C. After chamber 16 is pre-purged, substrates12 are inserted into chamber 16 so that substrates 12 are within themagnetic field provided by magnet 19, and stabilized for about 2 to 5minutes. Alternatively, a vacuum pump or the like is used to evacuate orpurge chamber 16 after substrates 12 are inserted.

After stabilization, a process gas such as nitrogen, forming gas, argon,or the like is introduced into chamber 16 at flow rate of approximately35 SLPM. The temperature within the chamber is ramped to the desiredprocess temperature preferably at about 15 to about 30° C./min. Forexample, substrates 12 are processed for approximately 45 to 90 minutesat 400° C. Control devices 21 provide accurate feedback for temperaturecontrol during processing. Once substrates 12 are processed, chamber 16is cooled at rate of about 3 to about 10° C./min, and substrates 12 areremoved from chamber 16. Substrates 12 are then ready for the next levelof processing.

FIG. 5 illustrates a partial cross-section view of an MRAM/GMRAM device91 processed as described above. Device 91 includes an insulating layer92 formed over substrate 12. A first magnetic layer 93 is formed overinsulating layer 92, a conductive non-magnetic layer 94 is formed overfirst magnetic layer 92, and a second magnetic layer 96 is formed overconductive non-magnetic layer 94. After processing according the presentinvention, first and second magnetic layers 93 and 96 are magnetized andtheir magnetic moments aligned. In addition, the materials are alloyedto further lower total electrical resistance.

For processing substrates 12 absent exposure to magnet 19, substrates 12are placed in enclosure 18, chamber 16 is pre-purged as required,substrates 12 are then placed in chamber 16. with an appropriate processgas or gases. Substrates 12 are then heated to the desired temperaturefor an appropriate time. Next substrates 12 are cooled and removed fromchamber 16.

Alternatively, substrates 12 are placed in boat 32 (as shown in FIG. 2)instead of enclosure 18. After pre-purge, substrates 12 are placedwithin liner 27 in chamber 16 with an appropriate process gas or gases.Substrates 12 are then heated to a desired temperature for anappropriate time. Next substrates 12 are either cooled while stillwithin liner 27, or substrates 12 are removed from liner 27 for fastercooling. Alternatively, substrates 12 are further cooled using injectors33. or the like.

FIG. 6 illustrates a cross-sectional view of a portion of asemiconductor device 101 processed using the apparatus of the presentinvention. For example, apparatus 11 is used to anneal source and drainregions 102 and 103 (e.g., source and drain regions are annealed atabout 800° C. to about 1200° C. in an inert ambient). Also, apparatus 11is used to form gate dielectric structure 104. For example, gatedielectric structure is grown using a dry O₂ source at a temperature ina range from about 750° C. to about 1000° C. Optionally, thermalnitridation using an NH₃ source is used in combination with the gateoxide to form oxynitride structures. In addition, apparatus 11 is usedto dope gate conductive layer 106 (similar to the process used to formsource and drain regions 102 and 103) and silicide regions 107. Forexample, silicide regions 107 are formed at about 600° C. to about 800°C. in an inert ambient such as argon.

By now it should be apparent that structures and methods have beenprovided for improved rapid thermal processing of substrates. Inparticular, by providing a cylindrical lamp array structure, batchprocessing of substrates is achieved by placing the major surfaces ofthe substrates substantially perpendicular or normal to the cylindricallamp array structure. This greatly improves throughput and cost ofownership compared to prior art RTP systems. Additionally, by adding anoptional magnetic field source surrounding at least portion of the lampstructure, storage devices such as NVM devices are processed in areliable and reproducible manner compared to prior art systems.

What is claimed is:
 1. An apparatus for annealing storage devices in thepresence of a magnetic field comprising: a process chamber forprocessing a substrate containing said storage devices on a majorsurface; a cylindrical lamp array including a plurality of lamps,wherein said cylindrical lamp array surrounds said process chamber suchthat said major surface of the substrate is substantially perpendicularto said plurality of lamps; and a magnetic device surrounding a portionof said cylindrical lamp array and said process chamber that provides amagnetic field within said process chamber to magnetize said storagedevices.
 2. The apparatus of claim 1 wherein said cylindrical lamp arraycomprises a plurality of parabolic reflectors.
 3. The apparatus of claim1 wherein said plurality of lamps comprises quartz halogen lamps.
 4. Theapparatus of claim 1 wherein said plurality of lamps are placed in astar-like pattern around said process chamber.
 5. The apparatus of claim1 wherein said process chamber comprises a material selected from thegroup consisting of fused quartz, sand quartz, silicon carbide, alumina,titanium, and tantalum.
 6. The apparatus of claim 1 further comprising atemperature control device including an outer sheath, an inner sheath,and a temperature transducer.
 7. The apparatus of claim 6 wherein saidouter sheath comprises quartz.
 8. The apparatus of claim 6 wherein saidinner sheath comprises silicon carbide.
 9. The apparatus of claim 1further comprising a substrate enclosure for supporting said substratewithin said process chamber and providing a radiant heat source.
 10. Theapparatus of claim 9 wherein said substrate enclosure comprises siliconcarbide.
 11. The apparatus of claim 1 further comprising a liner placedwithin a portion of said process chamber.
 12. The apparatus of claim 11wherein said liner comprises silicon carbide.
 13. The apparatus of claim1 further comprising an injector within said process chamber forinjecting a gas into said process chamber.
 14. The apparatus of claim 1further comprising a device for adjusting skew alignment of saidsubstrate with respect to said magnetic field.
 15. A method forannealing a plurality of substrates, each having major surfacescomprising the steps of: placing said plurality of substrates into acylindrically shaped process tube having opposing ends and a lengthwisecentral axis, wherein the major surfaces are substantially parallel tothe opposing ends and wherein said plurality of substrates are spacedapart from each other along said lengthwise central axis; purging thecylindrically shaped process tube to an oxygen concentration less thanabout 20 parts per million; and heating said plurality of substrateswith a plurality of lamps placed around said cylindrically shapedprocess tube wherein said plurality of lamps are positioned to focuslight energy along said lengthwise central axis substantially where theplurality of substrates are positioned; and controlling power applied tosaid plurality of lamps to provide a plurality of heating ones.
 16. Themethod of claim 15 further comprising the step of exposing saidplurality of substrates to a magnetic field.
 17. The method of claim 15wherein the step of heating said plurality of substrates includesheating said plurality of substrates with a cylindrically shaped lamparray comprising a plurality of quartz halogen lamps placed in astar-like pattern comprising five heating zones.
 18. The method of claim17 further comprising the step of individually monitoring temperature ofeach of the five heating zones.
 19. The method of claim 15 wherein thestep of placing said plurality of substrates within the cylindricallyshaped process tube includes placing said plurality of substrates withina liner contained within the cylindrically shaped process tube.
 20. Themethod of claim 19 wherein the step of placing said plurality ofsubstrates within the liner includes placing said plurality ofsubstrates in a liner that occupies only a portion of the cylindricallyshaped process tube.
 21. The method of claim 20 further comprising thesteps of: moving said plurality of substrates from within the liner tothat portion of the cylindrically shaped process tube not occupied bythe liner after the heating step; and cooling said plurality ofsubstrates.
 22. The method of claim 21 wherein the step of coolingincludes injecting a gas into the cylindrically shape process tubethrough a gas injector.
 23. The method of claim 19 wherein the step ofplacing said plurality of substrates within the liner includes placingsaid plurality of substrates within a silicon carbide liner.
 24. Themethod of claim 15 wherein the step of placing said plurality ofsubstrates includes placing said plurality of substrates within anenclosure and inserting the enclosure into the cylindrically shapedprocess tube.
 25. The method of claim 15 wherein the step of placingsaid plurality of substrates includes placing said plurality ofsubstrates into a cylindrically shaped process tube comprising amaterial selected from the group consisting of fused quartz, sandquartz, silicon carbide, alumina, titanium, and tantalum.
 26. A methodfor annealing a plurality of substrates, each having major surfacescomprising the steps of: placing said plurality of substrates into acylindrically shaped process tube having opposing ends and a lengthwisecentral axis, wherein the major surfaces are substantially parallel tothe opposing ends and wherein said plurality of substrates are spacedapart from each other along said lengthwise central axis; and heatingsaid plurality of substrates with a cylindrically shaped lamp arrayplaced around said cylindrically shaped process tube wherein said lamparray is positioned to focus light energy along said lengthwise centralaxis substantially where the plurality of substrates are positioned,wherein the heating step comprises a step selected from the groupconsisting of forming a silicide, forming a gate dielectric structure,and annealing a source and a drain region.
 27. The method of claim 15wherein the step of purging includes evacuating the cylindrically shapedprocess tube with a vacuum device.
 28. A method for annealing asubstrate having major surfaces comprising the steps of: placing thesubstrate into: a cylindrically shaped process tube having opposingends, wherein the major surfaces are substantially parallel to theopposing ends; and heating said substrate with non-volatile memorydevices contained thereon with a cylindrically shaped lamp array placedaround said cylindrically shaped process tube; exposing said substrateto a magnetic field to magnetize said substrate.
 29. The method of claim28 wherein the step of placing the substrate includes placing aplurality of substrates.
 30. The method of claim 28 wherein the step ofheating the substrate includes heating the substrate with acylindrically shaped lamp array comprising a plurality of quartz halogenlamps comprising a plurality of heating zones.
 31. The method of claim30 further comprising the step of individually monitoring temperature ofeach of the plurality of heating zones.
 32. The method of claim 28wherein the step of placing the substrate within the cylindricallyshaped process tube includes placing the substrate within a linercontained within the cylindrically shaped process tube.
 33. The methodof claim 32 wherein the step of placing the substrate within the linerincludes placing the substrate in a liner that occupies only a portionof the cylindrically shaped process tube and further comprising thesteps of: moving the substrate from within the liner to that portion ofthe cylindrically shaped process tube not occupied by the liner afterthe heating step; and cooling the substrate.
 34. The method of claim 28wherein the step of placing the substrate includes placing the substrateinto a cylindrically shaped process tube comprising a material selectedfrom the group consisting of fused quartz, sand quartz, silicon carbide,alumina, titanium, and tantalum.
 35. The method of claim 28 wherein theheating step includes one selected from the group consisting of forminga silicide, forming a gate dielectric structure, and annealing sourceand drain regions.
 36. The method of claim 28 further comprising thestep of purging the cylindrically shaped process tube to an oxygenconcentration less than about 20 parts per million.
 37. The method ofclaim 15 wherein said plurality of lamps each have a length runningsubstantially parallel to said lengthwise central axis.
 38. The methodof claim 15 wherein said plurality of lamps have a length running alonga length of said cylindrical process tube adjacent at least saidplurality of substrates.